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DIM600DCM17-A000
DIM600DCM17-A000
IGBT Chopper Module
Replaces September 2001, version DS5491-1.1 DS5491-2.0 March 2002
FEATURES
s s s s
10s Short Circuit Withstand High Thermal Cycling Capability Non Punch Through Silicon Isolated MMC Base with AlN Substrates
KEY PARAMETERS VCES (typ) VCE(sat) * (max) IC (max) IC(PK)
1700V 2.7V 600A 1200A
*(measured at the power busbars and not the auxiliary terminals)
APPLICATIONS
s s s
Choppers Motor Controllers Traction Drives
5(E1)
1(E1)
2(C2)
6(G1)
The Powerline range of modules includes half bridge, chopper, dual and single switch configurations covering voltages from 600V to 3300V and currents up to 2400A. The DIM600DCM17-A000 is a 1700V, n channel enhancement mode insulated gate bipolar transistor (IGBT) chopper module. The IGBT has a wide reverse bias safe operating area (RBSOA) plus full 10s short circuit withstand. This module is optimised for traction drives and other applications requiring high thermal cycling capability. The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise grounded heat sinks for safety.
7(C1) 3(C1) 4(E2)
Fig. 1 Chopper circuit diagram
ORDERING INFORMATION
Order As: DIM600DCM17-A000 Note: When ordering, please use the whole part number.
Outline type code: D (See package details for further information) Fig. 2 Electrical connections - (not to scale)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM600DCM17-A000
ABSOLUTE MAXIMUM RATINGS - PER ARM
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability. Tcase = 25C unless stated otherwise Symbol VCES VGES IC IC(PK) Pmax I2t Parameter Collector-emitter voltage Gate-emitter voltage Continuous collector current Peak collector current Max. transistor power dissipation Diode I2t value (IGBT arm) Diode I2t value (Diode arm) Visol QPD Isolation voltage - per module Partial discharge - per module Commoned terminals to base plate. AC RMS, 1 min, 50Hz IEC1287. V1 = 1500V, V2 = 1100V, 50Hz RMS Tcase = 70C 1ms, Tcase = 105C Tcase = 25C, Tj = 150C VR = 0, tp = 10ms, Tvj = 125C VGE = 0V Test Conditions Max. 1700 20 600 1200 4630 120 120 4000 10 Units V V A A W kA2s kA2s V pC
2/11
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM600DCM17-A000
THERMAL AND MECHANICAL RATINGS
Internal insulation material: Baseplate material: Creepage distance: Clearance: CTI (Critical Tracking Index): Symbol Rth(j-c) AlN AlSiC 20mm 10mm 175 Parameter Thermal resistance - transistor (per arm) Test Conditions Continuous dissipation junction to case Rth(j-c) Thermal resistance - diode (IGBT arm) Thermal resistance - diode (Diode arm) Rth(c-h) Thermal resistance - case to heatsink (per module) Tj Junction temperature Continuous dissipation junction to case Mounting torque 5Nm (with mounting grease) Transistor Diode Tstg Storage temperature range Screw torque Mounting - M6 Electrical connections - M4 Electrical connections - M8 -40 150 125 125 5 2 10 C C C Nm Nm Nm 40 40 8 C/kW C/kW C/kW Min. Typ. Max. 27 Units C/kW
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
3/11
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DIM600DCM17-A000
ELECTRICAL CHARACTERISTICS
Tcase = 25C unless stated otherwise. Symbol ICES Parameter Collector cut-off current Test Conditions VGE = 0V, VCE = VCES VGE = 0V, VCE = VCES, Tcase = 125C IGES VGE(TH) VCE(sat) Gate leakage current Gate threshold voltage Collector-emitter saturation voltage VGE = 20V, VCE = 0V IC = 30mA, VGE = VCE VGE = 15V, IC = 600A VGE = 15V, IC = 600A, , Tcase = 125C IF IFM VF Diode forward current Diode maximum forward current Diode forward voltage (IGBT arm) Diode forward voltage (Diode arm) Diode forward voltage (IGBT arm) Diode forward voltage (Diode arm) Cies Cres LM RINT SCData Input capacitance Reverse transfer capacitance Module inductance - per arm Internal transistor resistance - per arm Short circuit. ISC VCE = 25V, VGE = 0V, f = 1MHz VCE = 25V, VGE = 0V, f = 1MHz Tj = 125C, VCC = 1000V, tp 10s, VCE(max) = VCES - L*. di/dt IEC 60747-9 Note: Measured at the power busbars and not the auxiliary terminals) * L is the circuit inductance + LM I1 I2 IF = 600A, Tcase = 125C DC tp = 1ms IF = 600A Min. 4.5 Typ. 5.5 2.7 3.4 2.0 2.0 2.1 2.1 45 3.8 20 0.27 2780 2400 Max. 1 20 4 6.5 3.2 4.0 600 1200 2.3 2.3 2.4 2.4 Units mA mA A V V V A A V V V V nF nF nH m A A
4/11
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM600DCM17-A000
ELECTRICAL CHARACTERISTICS
Tcase = 25C unless stated otherwise Symbol td(off) tf EOFF td(on) tr EON Qg Qrr Parameter Turn-off delay time Fall time Turn-off energy loss Turn-on delay time Rise time Turn-on energy loss Gate charge Diode reverse recovery charge Diode arm IGBT arm Irr Diode reverse recovery current Diode arm IGBT arm Erec Diode reverse recovery energy Diode arm IGBT arm IF = 600A, VR = 50% VCES, dIF/dt = 3000A/s Test Conditions IC = 600A VGE = 15V VCE = 900V RG(ON) = RG(OFF) = 3.3 L ~ 100nH Min. Typ. 1200 140 190 250 250 220 6.8 370 150 800 350 250 100 Max. Units ns ns mJ ns ns mJ C C C A A mJ mJ
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
5/11
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DIM600DCM17-A000
ELECTRICAL CHARACTERISTICS
Tcase = 125C unless stated otherwise Symbol td(off) tf EOFF td(on) tr EON Qrr Parameter Turn-off delay time Fall time Turn-off energy loss Turn-on delay time Rise time Turn-on energy loss Diode reverse recovery charge Diode arm IGBT arm Irr Diode reverse recovery current Diode arm IGBT arm Erec Diode reverse recovery energy Diode arm IGBT arm IF = 600A, VR = 50% VCES, dIF/dt = 3000A/s Test Conditions IC = 600A VGE = 15V VCE = 900V RG(ON) = RG(OFF) = 3.3 L ~ 100nH Min. Typ. 1500 170 270 400 250 350 650 250 900 400 380 150 Max. Units ns ns mJ ns ns mJ C C A A mJ mJ
6/11
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM600DCM17-A000
TYPICAL CHARACTERISTICS
1200
Common emitter. 1100 Tcase = 25C
Vce is measured at power busbars
1200 Common emitter. 1100 Tcase = 125C
Vce is measured at power busbars
1000 and not the auxiliary terminals 900 Collector current, IC - (A) 800 700 600 500 400 300 200 100 0 0 0.5 1 1.5 2 2.5 3 VGE = 20V 15V 12V 10V 3.5 4 4.5 5
1000 and not the auxiliary terminals 900
Collector current, IC - (A)
800 700 600 500 400 300 200 100 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 Collector-emitter voltage, Vce - (V) 5.5 6 VGE = 20V 15V 12V 10V
Collector-emitter voltage, Vce - (V)
Fig. 3 Typical output characteristics
Fig. 4 Typical output characteristics
400
Conditions: Vce = 900V 350 Tc = 125C Rg = 3.3 Switching energy, Esw - (mJ) 300 250 200 150 100 50 0 0 Eoff Eon Erec 100 200 300 400 500 600 Collector current, IC - (A) 700 800
1600
Tj = 25C Tj = 125C
and not the auxiliary terminals
1400 VF is measured at power busbars 1200
Foward current, IF - (A)
1000 800 600 400 200 0 0
0.5
2.0 1.0 1.5 2.5 Foward voltage, VF - (V)
3.0
3.5
Fig. 5 Typical switching energy vs collector current
Fig. 6 Diode typical forward characteristics
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM600DCM17-A000
2000 1800
Reverse recovery current, Irr - (A)
800 700 600 500 400 300 200 100 Tj = 125C
1600
Collector current, IC - (A)
1400 Chip
1200 1000 800 600 400
Module
Tcase = 125C 200 Vge = 15V Rg(min) = 2.2 0 1200 0 400 800 1600 Collector-emitter voltage, Vce - (V)
2000
0 0
400
1200 800 Reverse voltage, VR - (V)
1600
2000
Fig. 7 Reverse bias safe operating area
100
Transient thermal impedance, Zth (j-c) - (C/kW )
Fig. 8 Diode reverse bias safe operating area
10000
Tvj = 125C, Tc = 70C
Freewheel and Antiparallel Diode
1000
Collector current, IC - (A)
Transistor
10
100 IC(max) DC tp = 50s tp = 100s tp = 1 ms 10
1 0.001
1 1 10 100 1000 10000 Collector-emitter voltage, Vce - (V)
0.01
0.1 Pulse width, tp - (s)
1
10
1 2 3 4 Ri (C/KW) 0.65865 5.7785 6.2197 15.3534 i (ms) 0.045 2.8869 21.7141 152.6381 Freewheel and Ri (C/KW) 1.5612 5.7426 6.999 25.6068 Antiparallel Diode i (ms) 0.0063516 1.4746 13.9664 111.7517 IGBT
Fig. 9 Forward bias safe operating area
Fig. 10 Transient thermal impedance
8/11
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM600DCM17-A000
1400
1200
DC collector current, IC - (A)
1000
800
600
400
200
0 0
20
40 60 80 100 120 Case temperature, Tcase - (C)
140
160
Fig. 11 DC current rating vs case temperature
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
9/11
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DIM600DCM17-A000
PACKAGE DETAILS
For further package information, please visit our website or contact Customer Services. All dimensions in mm, unless stated otherwise. DO NOT SCALE.
Nominal weight: 1050g Module outine type code: D
10/11
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
DIM600DCM17-A000
POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete Solution (PACs).
HEATSINKS
The Power Assembly group has its own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or customer service office.
http://www.dynexsemi.com e-mail: power_solutions@dynexsemi.com
HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. Tel: 00-44-(0)1522-500500 Fax: 00-44-(0)1522-500550 CUSTOMER SERVICE Tel: +44 (0)1522 502753 / 502901. Fax: +44 (0)1522 500020 SALES OFFICES Benelux, Italy & Switzerland: Tel: +33 (0)1 64 66 42 17. Fax: +33 (0)1 64 66 42 19. France & Spain: Tel: +33 (0)2 47 55 75 52. Fax: +33 (0)2 47 55 75 59. Germany, Northern Europe & Rest Of World: Tel: +44 (0)1522 502753 / 502901. Fax: +44 (0)1522 500020 North America: Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) / Tel: (949) 733-3005. Fax: (949) 733-2986.
These offices are supported by Representatives and Distributors in many countries world-wide. (c) Dynex Semiconductor 2002 Publication No. DS5491-2 Issue No. 2.0 March 2002 TECHNICAL DOCUMENTATION - NOT FOR RESALE. PRODUCED IN UNITED KINGDOM
Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change. Advance Information: The product design is complete and final characterisation for volume production is well in hand. No Annotation: The product parameters are fixed and the product is available to datasheet specification.
This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
11/11
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